? 2009 ixys corporation, all rights reserved ds99755b(7/09) v dss = 1000v i d25 = 29a r ds(on) 230m t rr 300ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c29a i dm t c = 25 c, pulse width limited by t jm 120 a i a t c = 25 c19a e as t c = 25 c2j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 520 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ i isol 1ma t = 1s 3000 v~ f c mounting force 40..120/4.5..27 n/lb. weight 8g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 300 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 4 ma r ds(on) v gs = 10v, i d = 19a, note 1 230 m IXFL38N100P polar tm power mosfet hiperfet tm ( electrically isolated tab) features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z international standard packages z minibloc, with aluminium nitride isolation z low drain to tab capacitance(<30pf) z rugged polysilicon gate cell structure z avalanche rated z fast intrinsic diode advantages z easy assembly z space savings z high power density applications z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls preliminary technical information isoplus i5-pak tm (hv) g = gate d = drain s = source g s d isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. IXFL38N100P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 19a, note 1 18 29 s c iss 24 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1245 pf c rss 80 pf r gi gate input resistance 0.78 t d(on) 74 ns t r 55 ns t d(off) 71 ns t f 40 ns q g(on) 350 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 19a 150 nc q gd 150 nc r thjc 0.24 c/w r thcs 0.15 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 38 a i sm repetitive, pulse width limited by t jm 150 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 2.5 c i rm 17 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s; duty cycle, d 2%. i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 19a r g = 1 (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. isoplus i5-pak tm hv (ixfl) outline pin 1 = gate pin 2 = source pin 3 = drain tap 4 = electricall isolated 2500v sym inches millimeter min max min max a 0.190 0.205 4.83 5.21 a1 0.102 0.118 2.59 3.00 a2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 d 1.020 1.040 25.91 26.42 e 0.770 0.799 19.56 20.29 e 0.150 bsc 3.81 bsc e1 0.450 bsc 11.43 bsc l 0.780 0.820 19.81 20.83 l1 0.080 0.102 2.03 2.59 q 0.210 0.235 5.33 5.97 q1 0.490 0.513 12.45 13.03 r 0.150 0.180 3.81 4.57 r1 0.100 0.130 2.54 3.30 s 0.668 0.690 16.97 17.53 t 0.801 0.821 20.34 20.85 u 0.065 0.080 1.65 2.03
? 2009 ixys corporation, all rights reserved IXFL38N100P fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 012345678 v ds - volts i d - amperes v gs = 15v 11v 10v 7v 8v 9v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 15v 11v 8v 9v 10v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 024681012141618 v ds - volts i d - amperes v gs = 15v 10v 8v 6v 7v 9v fig. 4. r ds(on) normalized to i d = 19a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 38a i d = 19a fig. 5. r ds(on) normalized to i d = 19a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 102030405060708090 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 28 32 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFL38N100P fig. 7. input admittance 0 10 20 30 40 50 60 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 102030405060708090 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 110 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 q g - nanocoulombs v gs - volts v ds = 500v i d = 19a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.01 0.10 1.00 10.00 100.00 1,000.00 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc 100ms 25s
? 2009 ixys corporation, all rights reserved fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w ixys ref: f_38n100(99)7-14-09-d IXFL38N100P
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